Title of article
Piezoresistive cantilevers using InAs-based 2D Heterostructures
Author/Authors
H Yamaguchi، نويسنده , , S Miyashita، نويسنده , , Y Hirayama، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
70
To page
73
Abstract
We measured the magneto-piezoresistance of micromechanical cantilevers fabricated from two-dimensional InAs/AlGaSb heterostructures. The magneto-piezoresistance showed the features of conductance fluctuation and Schbnikov–de Haas oscillation, depending on the sample electron mobility, indicating strong quantum effects on the piezoresistance. A possible mechanism for these quantum effects is discussed based on the comparison between the magneto-piezoresistance and differential magnetoresistance curves.
Keywords
GaAs (1 1 1)A , Q1D , MEMS , NEMS , InAs
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051431
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