Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation

We succeeded in reproducing experimental phenomena characteristic of metal-oxide-semiconductor field-effect-transistors (MOSFETs) fabricated on separation by implanted oxygen (SIMOX) wafers by device simulation. Previously, we have found that SIMOX wafers have energetically localized traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface, and we have also found that the traps cause current drops, suppression of kink and dependence of carrier lifetime on substrate bias in SIMOX MOSFETs. We developed a three-dimensional device simulator considering energetically localized traps at SOI/BOX interface, and we clarified that the novel phenomena in SIMOX MOSFETs come from the traps. We applied this simulator to three-dimensional MOSFET structures, and we estimated surface recombination velocity at SOI/BOX interface on SIMOX wafers.