Site-controlled InP nanowires grown on patterned Si substrates

InP nanowires were successfully grown on Si(1 0 0) and patterned Si(1 0 0) substrates by metalorganic vapor phase epitaxy under gold-catalyzed vapor–liquid–solid growth processes. Scanning and transmission electron microscopic studies showed InP nanowires grown on both substrates and the zinc-blende structure of the nanowires with 〈1 1 1〉 growth direction, respectively. Photoluminescence and cathodeluminescence measurements showed a significant blueshift in the spectral peak position compared to bulk InP due to the quantum confinement of the carriers in the nanowires and bright contrast corresponding to the nanowire structures. The site-controlled InP nanowires were grown at the positions where Au nanoparticles have been arranged through liquid Au migration and followed Au nanoparticle formation at a particular position on the patterned Si substarte.