Title of article
Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step
Author/Authors
H.Y. Liu، نويسنده , , T.J. Badcock، نويسنده , , I.R. Sellers، نويسنده , , W.M. Soong، نويسنده , , K.M. Groom، نويسنده , , M. Hopkinson، نويسنده , , D.J. Mowbray، نويسنده , , M.S. Skolnick، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
4
From page
129
To page
132
Abstract
The effects of growth temperature of the GaAs spacer layers (SPLs) on the photoluminescence (PL) efficiency of multi-layer GaAs-based 1.3-μm InAs/InGaAs dots-in-well (DWELL) structures have been investigated. It is found that the PL intensity of DWELLs is enhanced by incorporating a high growth temperature step for GaAs SPLs. This improved PL efficiency could be understood in term of reducing the non-radiative recombination centers. An extremely low continuous-wave room-temperature threshold current density of 35 A/cm2 is achieved for an as-cleaved 5-layer device with emission at 1.31 μm by using this growth technique.
Keywords
High growth temperature spacer layer , Quantum dots , 1.3 ?m , Semiconductor lasers , InAs/InGaAs dot-in-well structure
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051526
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