Title of article :
Fabrication and characterization of a PbTe quantum dots multilayer structure
Author/Authors :
E. Rodriguez، نويسنده , , E. Jimenez، نويسنده , , G.J. Jacob، نويسنده , , A.A.R. Neves b، نويسنده , , C.L. Cesar، نويسنده , , L.C. Barbosa، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2005
Abstract :
Multilayer PbTe quantum dots (QDs) and SiO2 were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region.
Keywords :
PECVD , Semiconductor quantum dots , Pulsed laser deposition
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures