Author/Authors :
I.R. Sellers، نويسنده , , H.Y. Liu، نويسنده , , T.J. Badcock، نويسنده , , K.M. Groom، نويسنده , , D.J. Mowbray، نويسنده , , M. Gutiérrez، نويسنده , , M. Hopkinson، نويسنده , , M.S. Skolnick، نويسنده ,
Abstract :
We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature Jth and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.
