Title of article
Defects in porous Si investigated by a temperature variation of photoluminescence spectra
Author/Authors
Ji Yu Ming، نويسنده , , In-Ho Bae، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
3
From page
121
To page
123
Abstract
Photoluminescence (PL) measurements on porous Si (PS) are carried out to investigate the inter defects and to determine the activation energies in PS. The activation energies of the electrons confined in PS A peak and B peak, as obtained from the temperature-dependent PL spectra, were 67 and 61 meV, respectively.
Keywords
Porous Si , Photoluminescence , Silicon
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051615
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