Thermal correction to resistivity in dilute 2D Si-based systems

Neglecting e–e interactions and quantum interference effects, we calculate the classical resistivity of 2D electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function of temperature, expressed in units of h/e2(kFl)-1. Analysis of compressibility and thermopower points to thermodynamic nature of metal–insulator transition in 2D systems. We reproduce the beating pattern of Shubnikov–de Haas oscillations in both the crossed field configuration and Si-MOSFET valley splitting cases. The consequences of IQHE in dilute Si-MOSFET 2DEG is discussed. The giant parallel magnetoresistivity is argued to result from the magnetic field-driven disorder.