Author/Authors :
D. Walker، نويسنده , , F. Pulizzi، نويسنده , , A. Patanè، نويسنده , , L. Eaves، نويسنده , , D. Granados، نويسنده , , J.M. Garcia، نويسنده , , M. Henini، نويسنده , , V.V. Rudenkov، نويسنده , , P.C.M Christianen، نويسنده , , J.C. Maan، نويسنده , , P. Offermans، نويسنده , , P.M. Koenraad، نويسنده , , G. Hill، نويسنده ,
Abstract :
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a GaAs/(AlGa)As resonant tunneling diode incorporating a layer of ring-shaped quantum dots (QDs) in the quantum well (QW). The dots give rise to a series of four unusual resonances in I(V) which show a high degree of reproducibility across the epitaxial wafer. By combining data for B parallel and perpendicular to the growth axis z, we identify that the unusual resonances arise from resonant tunneling into QD excited states with 2pz-like symmetry. The two series of magneto-oscillations in I for B∥z allow us to determine the resonant charging and discharging of the QW with varying bias.
