Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures

Magnetotransport properties of quasi-one-dimensional (quasi-1D) quantum wires based on InGaAs/InP heterojunctions were studied. The influence of the wire width as well as of the temperature on the weak antilocalization was investigated. A crossover from the weak antilocalization to the weak localization regime was observed in the very narrow wires. The analysis of the characteristic scattering lengths suggests a strong effect of the electron confinement and diffusive boundary scattering on the suppression of the weak antilocalization.