Material dependence of spin transport modulated by magnetic barriers in semiconductor nano-wires

We present the properties of ballistic spin transport through magnetic barrier structures in semiconductor nano-wires. The Landauerʹs approach is adopted to calculation of the transmission probability and the conductance for various host material nano-wires which are different remarkably from each other in effective g-factors. A host material having small effective g-factor is quantized in the conductance and the spin-dependence is disappeared in it. Nevertheless this kind of behavior is broken for the host material having large effective g-factor and the spin-dependent splitting is shown.