Title of article :
Ferromagnetic Ge(Mn) nanostructures
Author/Authors :
S. Ahlers، نويسنده , , D. Bougeard، نويسنده , , H. Riedl، نويسنده , , G. Abstreiter، نويسنده , , A. Trampert، نويسنده , , W. Kipferl، نويسنده , , M. Sperl، نويسنده , , A. Bergmaier، نويسنده , , G. Dollinger، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
We present structural, magnetic and transport properties of Mn-doped Ge layers grown by molecular beam epitaxy (MBE) at low substrate temperatures TS. Atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM) analysis of structures grown at View the MathML source and View the MathML source reveal defect-free epitaxy of Ge(Mn) on Ge(0 0 1) substrates. Despite the low TS we observe the formation of round shaped clusters with a diameter of 15–20 nm which are incoherent with the Ge matrix in TEM analysis for a Mn concentration x of 3.4%. SQUID measurements reveal ferromagnetism and a TC of around View the MathML source for the layers, reminiscent of the intermetallic compound Mn5Ge3. Transport measurements, however, indicate that Mn is incorporated into the Ge matrix between the Mn5Ge3 clusters as well.
Keywords :
Ge , Mn , GeMn , DMS , Mn5Ge3 , Germanium , Ferromagnetic semiconductor , manganese
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures