Title of article
Electrical spin injection from ZnMnSe into InGaAs-based quantum structures
Author/Authors
W. L?ffler، نويسنده , , D. Tr?ndle، نويسنده , , H. Kalt، نويسنده , , D. Litvinov، نويسنده , , D. Gerthsen، نويسنده , , J. Lupaca-Schomber، نويسنده , , T. Passow، نويسنده , , B. Daniel، نويسنده , , J. Kvietkova، نويسنده , , M. Hetterich، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
4
From page
434
To page
437
Abstract
We report on electrical spin injection into InGaAs-based nanostructures through a semi-magnetic ZnMnSe layer in a magnetic field. We show an optical polarization degree of the electro-luminescence of up to 35% in InGaAs quantum wells and up to 14% in InGaAs quantum dots. To be able to attribute the polarization of the emitted photons to the spin alignment in the semi-magnetic layer, we have fabricated reference devices and performed all-optical measurements.
Keywords
Quantum dots , Magnetic semiconductor , Spintronics , Spin injection , Hybrid structures
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051888
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