Author/Authors :
W. L?ffler، نويسنده , , D. Tr?ndle، نويسنده , , H. Kalt، نويسنده , , D. Litvinov، نويسنده , ,
D. Gerthsen، نويسنده , , J. Lupaca-Schomber، نويسنده , , T. Passow، نويسنده , , B. Daniel، نويسنده , , J. Kvietkova، نويسنده , , M. Hetterich، نويسنده ,
Abstract :
We report on electrical spin injection into InGaAs-based nanostructures through a semi-magnetic ZnMnSe layer in a magnetic field. We show an optical polarization degree of the electro-luminescence of up to 35% in InGaAs quantum wells and up to 14% in InGaAs quantum dots. To be able to attribute the polarization of the emitted photons to the spin alignment in the semi-magnetic layer, we have fabricated reference devices and performed all-optical measurements.
Keywords :
Quantum dots , Magnetic semiconductor , Spintronics , Spin injection , Hybrid structures
