Title of article
Optical characterisation of InAs/InP quantum dot photonic cavity membranes
Author/Authors
S. Frédérick، نويسنده , , D. Dalacu، نويسنده , , G.C. Aers، نويسنده , , P.J. Poole، نويسنده , , J. Lapointe، نويسنده , , R.L. Williams، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
4
From page
504
To page
507
Abstract
We present an experimental investigation of the localised optical defect modes in hexagonal symmetry, single missing hole defect, InP membrane, photonic crystal microcavities. An InAs/InP quantum dot ensemble is located at the midpoint of the InP membrane to allow characterisation of the optical modes in emission. Simple modifications to the cavity configuration are used to split the degeneracy of the orthogonally polarised x- and y-dipole cavity modes and to introduce a higher energy mode into the cavity with cavity quality factor Q up to 2,800.
Keywords
Quantum cryptography , Quantum dots , Microcavity , Photonic bandgap
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051905
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