Self-aligned doping profiles in nanoscale silicon structures

We propose and demonstrate a method for self-aligning control of doping profiles in nanoscale silicon devices. The method is based on different segregation behaviour of n-type and p-type dopants during thermal oxidation. The simulations show that in nanowires with compensated impurity concentrations the type of conductivity can be changed from p-type to n-type. We use the method to realize a lateral field effect device in silicon showing pn-diode-like characteristics at 300 K.