Title of article
The origin of switching noise in GaAs/AlGaAs lateral gated devices
Author/Authors
A.R. Long، نويسنده , , M. Pioro-Ladrière، نويسنده , , J.H. Davies، نويسنده , , A.S. Sachrajda، نويسنده , , Louis Gaudreau، نويسنده , , P. Zawadzki، نويسنده , , J. Lapointe، نويسنده , , J. Gupta، نويسنده , , Z. Wasilewski، نويسنده , , S.A. Studenikin، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
4
From page
553
To page
556
Abstract
We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of View the MathML source using a quantum corral fabricated on similar material.
Keywords
Telegraph noise , Quantum devices , Bias cooling
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1052068
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