Theoretical calculation of magneto-transport properties in semiconductor devices and comparison to experimental data

Negative bend resistance is a signature of ballistic transport in low-dimension semiconductor devices. We calculate the bend resistance in 4-terminal devices using R-matrix theory. R-matrix theory is a technique first introduced in nuclear physics and recently shown to be a useful tool for calculating transport properties of solid-state devices. We have improved upon the existing implementations of R-matrix theory in device physics by applying a variational basis function approach that dramatically improves the rate of convergence of transmission coefficients. We have also developed a method for calculating transmission coefficients of a device in a nonzero magnetic field. We calculate bend resistance in 4-terminal devices.