Title of article :
Metal–insulator transition in the 2DEG in image-Si:GaAs under pressure
Author/Authors :
E. Dizhur، نويسنده , , A. Voronovsky، نويسنده , , A. Fedorov، نويسنده , , I. Kotel’nikov، نويسنده , , S. Dizhur، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
The high pressure induced variation of the band structure of GaAs was used to change free carrier density in 2D layer formed by near-to-surface delta-doped GaAs. Simultaneous measurements of lateral resistivity and tunnel spectra showed that under pressure of about 1.7 GPa a metal–insulator transition occurs in 2DEG.
Keywords :
2DEG , Delta doping , High pressure , Tunneling , MIT
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
