Title of article
Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories
Author/Authors
B.I. Seo، نويسنده , , U.A Shaislamov، نويسنده , , S.-W. Kim، نويسنده , , H.-K. Kim، نويسنده , , B. Yang، نويسنده , , S.K. Hong، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2007
Pages
5
From page
274
To page
278
Abstract
We report results of fabrication and examination of Bi3.25La0.75Ti3O12 (BLT) ferroelectric nanotubes. BLT nanotubes are suggested for developing 3D ferroelectric nanotube capacitors which could be used in high-density memory applications. BLT nanotubes were prepared by template-wetting process using polymeric sources where anodic aluminum oxide had been used as a template. After annealing, tubular BLT structures were crystallized inside the pores of the template. By selective etching of the template, released BLT nanotubes have been obtained. Crystallization and nucleation of the nanotubes were analyzed by XRD and FE-SEM techniques.
Keywords
BLT , Anodization , Ferroelectric , Porous alumina , Nanotube
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2007
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1052161
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