Title of article :
Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals
Author/Authors :
P. Basa، نويسنده , , Zs.J. Horvath، نويسنده , , T. Jaszi، نويسنده , , A.E. Pap، نويسنده , , L. Dobos، نويسنده , , B. Pecz ، نويسنده , , L. T?th، نويسنده , , P. Sz?ll?si، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2007
Pages :
5
From page :
71
To page :
75
Abstract :
In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures.
Keywords :
Nonvolatile memory , MNS , Silicon nitride , Si nanocrystals , LPCVD
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2007
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1052181
Link To Document :
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