A nano-transistor using a mesoscopic ring: The elastic and inelastic interactions analysis

This paper presents a model for a nano-transistor in a mesoscopic ring, using Greenʹs function method. The ring structure consists of 8 atoms and two symmetrically attached metallic electrodes, which is controlled by a gate contact voltage and is threaded by a magnetic flux. Research involves the analysis of coherent (low temperature) and non-coherent (room temperature) transports with considering the effects of inelastic electron–phonon interactions on current versus voltage characteristics. Finally, we explore the nano-transistor operation in the mesoscopic ring structure and fit the resulted characteristics with the conventional MOSFET behaviour, and the nano-transistor parameters are extracted versus the structure specifications. The calculations are performed using the Tight-binding theory and also the modified Greenʹs function method within the framework of mapping technique. According to the numerical simulations, the transport properties can be changed statically by the coupling strength between the ring and each electrode, and dynamically by the gate voltage and magnetic flux.