Title of article
ANALYSIS OF DEPENDENCE OF RESONANT TUNNELING ON STATIC POSITIVE PARAMETERS IN A SINGLE-NEGATIVE BILAYE
Author/Authors
By W.-H. Lin، نويسنده , , C.-J. Wu، نويسنده , , T.-J. Yang، نويسنده , , and S.-J. Chang ، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2011
Pages
15
From page
151
To page
165
Abstract
It is known that electromagnetic resonant tunneling phenomenon can be found in the single-negative (SNG) bilayer, a two-layer coating made of the epsilon-negative (ENG) and the mu-negative (MNG) media. In this work, we report that this resonant tunneling is strongly dependent on the static positive parameters in SNG materials. The values of the static permeability in ENG layer and the static permittivity in MNG layer for obtaining the resonant tunneling are theoretically analyzed and discussed for two possible cases of equal- and unequal-thicknesses. Useful design guidelines in selecting positive parameters for the resonant tunneling are obtained. We also investigate the possible influence in the resonant tunneling due to the losses from the ENG and MNG materials. Additionally, we examine the polarization-dependent resonant tunneling, that is, the dependence of angle of incidence is examined.
Journal title
Progress In Electromagnetics Research
Serial Year
2011
Journal title
Progress In Electromagnetics Research
Record number
1052714
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