Title of article
AN ANN-BASED SMALL-SIGNAL EQUIVALENT CIRCUIT MODEL FOR MOSFET DEVICE
Author/Authors
By N. Li، نويسنده , , X. Li، نويسنده , , and S. Quan ، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
14
From page
47
To page
60
Abstract
An ANN-based small-signal equivalent circuit model for 130 nm MOSFET device is proposed in this paper. The proposed model combines the conventional small-signal equivalent circuit model and artificial neural networks (ANNs) to achieve higher accuracy. Good agreement is obtained between proposed model and measured results confirming the validity and effectiveness of proposed model.
Journal title
Progress In Electromagnetics Research
Serial Year
2012
Journal title
Progress In Electromagnetics Research
Record number
1052830
Link To Document