Title of article :
Inner-shell spectroscopy of compounds containing Si-Si bonds: is there a localised, low-energy Si-Si resonance? Original Research Article
Author/Authors :
S.G. Urquhart، نويسنده , , J.Z. Xiong، نويسنده , , A.T. Wen، نويسنده , , T.K. Sham، نويسنده , , K.M. Baines، نويسنده , , A.S. Schlachter and G.G.B. de Souza، نويسنده , , A.P. Hitchcock، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 1994
Pages :
12
From page :
757
To page :
768
Abstract :
Oscillator strengths for the Si 2p, Si 2s, and C 1s excitation of tetramethylsilane, hexamethyldisilane, tetrakis(trimethylsilyl)silane, and dodecamethylcyclohexasilane have been derived from electron energy loss spectra recorded in the dipole-regime. These results are compared to the Si l s and Si 2p photoabsorption spectra of tetramethylsilane, hexamethyldisilane, tris(trimethylsilyl)silane, and tetrakis(trimethylsilyl)silane, recorded using synchrotron radiation. The spectra support the existence of a localised, low-lying state of large Si-Si character in species which contain Si-Si bonds.
Journal title :
Chemical Physics
Serial Year :
1994
Journal title :
Chemical Physics
Record number :
1057061
Link To Document :
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