Title of article
Effect of pseudo-phonon side hole in laser-induced hole filling Original Research Article
Author/Authors
Yong-Le Pan، نويسنده , , You-Yuan Zhao، نويسنده , , Ling-Bing Chen، نويسنده , , Yu Yin، نويسنده , , Fuming Li، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 1996
Pages
7
From page
277
To page
283
Abstract
Multiple hole-burning processes have been studied in a photon-gated donor-acceptor electron-transfer system. Zinc-tetraphenylbenzoporphyrin (Zn-TPBP_ and zinc-tetraphenyl(4-phenyl-acetylamino)benzotribenzoporphyrin (Zn-TPBTP) were used together as the electron donors, while phydroxybenzaldhyde (PHBA) was the electron acceptor, and they are doped in the matrix poly(methyl)methacrylate (PMMA). It is more effective to form multiple holes from the shorter wavelength side to the longer side in such a system than the other way round. This wavelength-dependent phenomenon of laser-induced hole filling is mainly due to the effect of the pseudo-phonon side band, which leads to a smaller absorption loss at the zero-phonon holes previously burned, but to a larger absorption loss in the region that was not previously burned. Then, the previously burned holes, especially those holes located at the longer wavelength side of the new burning hole, seem to be filled. A theoretical simulation based on this assumption shows fairly good agreement with the experimental results.
Journal title
Chemical Physics
Serial Year
1996
Journal title
Chemical Physics
Record number
1057494
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