Title of article
Si core-level excitation of hexamethyldisilane studied by synchrotron radiation and multiple-scattering X α calculation Original Research Article
Author/Authors
J.Z. Xiong، نويسنده , , D.T. Jiang، نويسنده , , Z.F. Liu، نويسنده , , K.M. Baines، نويسنده , , T.K. Sham، نويسنده , , S.G. Urquhart، نويسنده , , A.T. Wen، نويسنده , , T. Tyliszczak، نويسنده , , A.P. Hitchcock، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 1996
Pages
12
From page
81
To page
92
Abstract
The Si 1s, Si 2s and Si 2p core-level photoabsorption spectra of hexamethyldisilane have been recorded by synchrotron radiation and calculated by the multiple-scattering (MS) X α method. The results of the calculation are in semiquantitative agreement with the experimental spectra. The relative intensity of corresponding transitions at the (1s, 2s) or (2p) edges differs greatly on account of atomic-like propensity rules (s → p, p → s, d). Comparison of the gas phase and solid state Si 2p spectra with the MS-X α results indicates that many of the features in the Si 2p spectrum of hexamethyldisilane correspond to transitions to states of mixed valence and Rydberg character.
Journal title
Chemical Physics
Serial Year
1996
Journal title
Chemical Physics
Record number
1057511
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