• Title of article

    Si core-level excitation of hexamethyldisilane studied by synchrotron radiation and multiple-scattering X α calculation Original Research Article

  • Author/Authors

    J.Z. Xiong، نويسنده , , D.T. Jiang، نويسنده , , Z.F. Liu، نويسنده , , K.M. Baines، نويسنده , , T.K. Sham، نويسنده , , S.G. Urquhart، نويسنده , , A.T. Wen، نويسنده , , T. Tyliszczak، نويسنده , , A.P. Hitchcock، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 1996
  • Pages
    12
  • From page
    81
  • To page
    92
  • Abstract
    The Si 1s, Si 2s and Si 2p core-level photoabsorption spectra of hexamethyldisilane have been recorded by synchrotron radiation and calculated by the multiple-scattering (MS) X α method. The results of the calculation are in semiquantitative agreement with the experimental spectra. The relative intensity of corresponding transitions at the (1s, 2s) or (2p) edges differs greatly on account of atomic-like propensity rules (s → p, p → s, d). Comparison of the gas phase and solid state Si 2p spectra with the MS-X α results indicates that many of the features in the Si 2p spectrum of hexamethyldisilane correspond to transitions to states of mixed valence and Rydberg character.
  • Journal title
    Chemical Physics
  • Serial Year
    1996
  • Journal title
    Chemical Physics
  • Record number

    1057511