Quantum dots in the strong confinement regime: a model system for gain in quasi zero-dimensional semiconductors Original Research Article

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.