Title of article :
Direct calculation of electronic Raman scattering intensity for Ce3+ in Cs2NaCeCl6 Original Research Article
Author/Authors :
M. Chua، نويسنده , , P.A. Tanner، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 1997
Pages :
4
From page :
83
To page :
86
Abstract :
The direct calculation of electronic Raman scattering intensities is presented in detail for four transitions from the electronic ground state to crystal field levels within the 2F52 and 2F72 multiplet terms of Ce3+ in the cubic host lattice Cs2NaCeCl6. The agreement with experiment is good without contributions from g-electron states, and the transition intensity pathways involve all of the d-electron states with mostly comparable contributions. The results are also similar to those from the conventional Judd-Ofelt-Axe theory since the effective baricentre approximation may be most valid for Ce3+ out of all the lanthanide ions.
Keywords :
Electronic Raman , Elpasolite , Direct calculation , Lanthanide ion
Journal title :
Chemical Physics
Serial Year :
1997
Journal title :
Chemical Physics
Record number :
1058042
Link To Document :
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