• Title of article

    Crystallographic behavior of FeS2 films formed on different substrates

  • Author/Authors

    Shir-Ly Huang، نويسنده , , L. Meng، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    413
  • To page
    416
  • Abstract
    FeS2 polycrystalline films were prepared on amorphous glass, monocrystalline Si (1 0 0), polycrystalline Al and microcrystalline TiO2 film substrates by sulfuration annealing of magnetron sputtered iron films. The crystal microstructure and orientation distribution of the films were investigated. The FeS2 films formed on Si (1 0 0) and glass substrates have relatively fine and uniform grains and small lattice distortion at the interface between the film and substrate but insignificant preferred orientation. The FeS2 films formed on Al or TiO2 substrates have relatively inhomogeneous microstructure, large lattice distortion at the interface and a (2 0 0) or (2 2 0) preferred orientation. High strain energy at the interface should be responsible for the preferred orientation and inhomogeneous microstructure in the films.
  • Keywords
    Thin films , Interfaces , Crystallography , Microstructure
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2010
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1059048