Investigation of optical properties of core–shell silicon nanowires

The ability to control the size, orientation, composition and morphology of silicon nanowires (SiNWs) presents an ideal platform for exploring a wide range of potential technological applications. In this work, we demonstrated the detail study of optical properties of highly disordered core–shell SiNWs that were grown by atmospheric pressure chemical vapor deposition. The microstructure of SiNWs was characterized by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The TEM study shows that the SiNWs consists of crystalline core silicon surrounded by thick amorphous silicon oxide. The total diameter including the outer SiO2 sheath was 60–80 nm. The reflection and absorption of a-SiO2/c-SiNWs were affected by process parameter like silane flow rate and hydrogen dilution. The optical reflection of SiNWs decreased with increasing photon energy across the visible and near the ultraviolet range, approaching mothʹs eye antireflection. Specifically, a minimum reflection of 2–3% was observed at 400 nm. The band gap is estimated at ∼1.32 eV by quasi-direct band Taucʹs plot. The sum of localized states at the band edge is ∼0.53 eV. Straight SiNWs have lower reflection than those of nanoparticles mixed SiNWs and coil mixed SiNWs. The reflection and absorption of SiO2/SiNWs were confirmed to respond strongly to infrared with increasing H2 flow rate.