Title of article :
Nonlinear electronic transport behavior in Indium Nitride
Author/Authors :
Cl?ves G. Rodrigues، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2012
Pages :
6
From page :
317
To page :
322
Abstract :
A theoretical study on the nonlinear transport of electrons and of the nonequilibrium temperature in n-doped Indium Nitride under influence of moderate to high electric fields (in this nonlinear domain) is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The electric current and the mobility in the steady state are obtained, and their dependence on the electric field strength and on the concentration (that is, a mobility dependent nonlinearly on field and concentration) is obtained and analyzed.
Keywords :
Transport properties , Electral properties , Semiconductors , Nitrides
Journal title :
Materials Chemistry and Physics
Serial Year :
2012
Journal title :
Materials Chemistry and Physics
Record number :
1059694
Link To Document :
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