Title of article
Impedance spectroscopy analysis of complex perovskite Ho(Ni1/2Zr1/2)O3
Author/Authors
Nishant Kumar، نويسنده , , Alo Dutta، نويسنده , , S. Prasad، نويسنده , , T.P. Sinha، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2013
Pages
5
From page
134
To page
138
Abstract
The complex perovskite oxide Holmium nickel zirconate, Ho(Ni1/2Zr1/2)O3(HNZ) is synthesized by solid-state reaction technique. The X-ray diffraction pattern of the sample at room temperature shows a monoclinic phase. The microstructure analysis is done by scanning electron microscope. Alternating current impedance spectroscopy is applied to investigate the electrical properties of HNZ in a temperature range from 313 K to 723 K and in a frequency range from 100 Hz to 1 MHz. The complex impedance plane plots show that the relaxation mechanism in HNZ is due to grain boundary effect. Scaling behavior of imaginary part of impedance indicates that relaxation in HNZ describes the same mechanism at various temperatures. The frequency dependent conductivity data are fitted to the universal power law. The frequency dependent electrical data are also analyzed in the framework of electric modulus formalism.
Keywords
Chemical synthesis , Ceramics , Electrical properties , Sintering
Journal title
Materials Chemistry and Physics
Serial Year
2013
Journal title
Materials Chemistry and Physics
Record number
1059872
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