Title of article
A new chemical method for the preparation of Ag2S thin films
Author/Authors
B.R Sankapal، نويسنده , , R.S. Mane a، نويسنده , , C.D. Lokhande، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
4
From page
226
To page
229
Abstract
Semiconducting Ag2S thin films were deposited onto amorphous glass, and single crystalline wafer of Si(1 1 1) by using a new, simple and less expensive successive ionic layer adsorption and reaction (SILAR) chemical method. The XRD studies show that the crystallinity of Ag2S film depends on the type of substrate. The microstructural, optical and electrical properties of Ag2S films deposited onto glass substrate and subsequently annealed at various (373–573 K) temperatures in air were studied and results are reported.
Keywords
Chemical method , Structural , Optical and electrical properties , Ag2S thin films
Journal title
Materials Chemistry and Physics
Serial Year
2000
Journal title
Materials Chemistry and Physics
Record number
1060243
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