Passivation of boron in the doped CVD diamond films by H+ implantation

Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition (CVD). Subsequently, the films were implanted with 120 keV H+ to dose of 5 × 1014 ∼ 5 × 1016 cm−2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is thought that the formation of H–B pairs plays an important pole in property changes. However, the electrical resistance of DF is influenced by both implantation dose and annealing. Secondary ion mass spectroscopy (SIMS) results show that B atoms have uncommon profiles after H+ implantation and annealing. This phenomenon, maybe, has the potential for application in designing the DF device.