Title of article :
Effect of Sb doping on properties of conductive spray deposited SnO2 thin films
Author/Authors :
K.Y. Rajpure *، نويسنده , , M.N Kusumade، نويسنده , , Michael N Neumann-Spallart، نويسنده , , C.H. Bhosale *، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Abstract :
Antimony doped SnO2 films have been prepared by spray pyrolysis. The films deposited at an optimised substrate temperature of 520°C were found to have a resistivity as low as 0.4×10−4 Ω cm. Doping concentration of Sb in the spraying solution was varied from 0.5 to 5%, keeping the spray rate constant. The sheet resistance was as low as 6 Ω cm−2. About 80% average transmission in the visible region was obtained for 1% Sb doped films. The refractive index increased from 1.62 to 2.64 with increasing the Sb content from 0 to 5%. Van-der-Pauw’s four probe technique of conductivity measurement was used to measure electrical conductivity (σ), Hall coefficient (RH), carrier concentration (n) and Hall mobility (μH) of the Sb:SnO2 films. The films deposited using 1% Sb doping showed the best properties.
Keywords :
Thin films , X-ray diffraction , Tin oxide , Spray pyrolysis , Electrical properties
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics