Growth of copper sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method

The copper sulphide (CuxS) thin films were deposited using relatively simple and new successive ionic layer adsorption and reaction (SILAR) method using copper sulphate and thiourea solutions as cationic and anionic precursors, respectively. The films were deposited on glass and Si (1 1 1) wafer substrates. To obtain good quality CuxS thin films, preparative conditions such as concentration, pH and temperature of cationic and anionic precursor solutions adsorption, reaction and rinsing time durations etc. were optimised. The characterisation of the films was carried out by using X-ray diffraction, scanning electron microscopy, optical absorption, electrical resistivity and thermoemf techniques.