Growth mechanism of FeN films by means of an atmospheric pressure halide chemical vapor deposition

The growth mechanism of FeN films by means of an atmospheric pressure halide chemical vapor deposition has been investigated with respect to the growth parameters, such as the partial pressure of FeCl3, the supplied source ratio of [NH3]/[FeCl3] and the mole fraction of H2 in the carrier gas. It is found that the growth rate and magnetic properties of the resulting FeN films are strongly dependent on these parameters. It is concluded that FeCl3 in gaseous state plays an important role in the formation of ε-Fe3N film.