Title of article
Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x
Author/Authors
A.S. Saidov، نويسنده , , A.Sh. Razzakov، نويسنده , , V.A. Risaeva، نويسنده , , E.A. Koschanov، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2001
Pages
6
From page
1
To page
6
Abstract
Epitaxial layers of (Ge2)1−x(ZnSe)x solid solutions from solution-melt, limited by horizontal GaAs and Ge substrates have been grown. The dependence of lattice perfection on growth conditions is shown. X-ray fluorescence spectrum, diffraction pattern and scanning picture, photoluminescence the dependence of Hall mobility from temperature and current–voltage (I–V) characteristics of the structures are studied.
Keywords
Liquid-phase epitaxy , (Ge2)1?x(ZnSe)x , Solution-melt
Journal title
Materials Chemistry and Physics
Serial Year
2001
Journal title
Materials Chemistry and Physics
Record number
1060435
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