Photoelectrochemical characterization of chemically deposited (CdS)X(Bi2S3)1−X composite thin films

(CdS)X(Bi2S3)1−X composite thin films were chemically deposited using simple successive ionic layer adsorption and reaction (SILAR) method onto glass and fluorine doped tin oxide (FTO) coated glass substrates. The films were annealed in air at 200°C for 2 h and used to fabricate photoelectrochemical cells of configuration: (CdS)X(Bi2S3)1−X/Na2SSNaOH/C and their properties, such as current–voltage (I–V), photovoltaic output, spectral response, capacitance–vo1tage (Mott–Schotttty plots), etc. It is found that the (CdS)X(Bi2S3)1−X composite thin films are photoactive. The effect of composition ‘X’ on these properties was studied.