Title of article
Resistive heated MOCVD deposition of InN films
Author/Authors
Jih-Shang Hwang، نويسنده , , Chung Han Lee، نويسنده , , Fuh-Hsiang Yang، نويسنده , , Kuei-Hsien Chen، نويسنده , , Luu-Gen Hwa، نويسنده , , Ying-Jay Yang، نويسنده , , Li-Chyong Chen، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2001
Pages
6
From page
290
To page
295
Abstract
Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) substrate using a simple resistive heated metalorganic chemical vapor deposition (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within 1°C. Structural studies and optical property measurement by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temperature (540°C). The room temperature photoluminescence spectrum of the InN film showed a strong peak at 1.8 eV. Further high resolution transmission electron microscopy (HRTEM) investigation revealed some inclusion of nanocrystalline phase, which might be responsible for the strong photoluminescence signal.
Keywords
electron microscopy , Nitrides , MOCVD , Optical properties
Journal title
Materials Chemistry and Physics
Serial Year
2001
Journal title
Materials Chemistry and Physics
Record number
1060692
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