YBa2Cu3O7−δ thin films deposited by a vertical MOCVD reactor

Thin films of YBCO have been grown by a home-built-MOCVD vertical reactor. The growth temperature were varied between 600 and 750 °C and the growth rates were 0.4–0.5 μm/h. At the substrate temperature between 630 and 675 °C, the films consist of a mixture of a-axis and c-axis oriented grains, while at temperature of 700 °C or higher, the a-axis oriented grain changed to random orientation. The stoichiometric composition of Y:Ba:Cu for films grown at 680 °C or higher is almost 1:2:3, as confirmed by electron dispersive X-rays (EDAX) spectra. Films deposited at 680 and 700 °C show superconducting critical temperature around 87 and 87.4 K, respectively. Films properties are comparable with film grown using horizontal MOCVD reactor reported by previous reports.