• Title of article

    Dielectric relaxation in SrBi2(V0.1Nb0.9)2O9 layered perovskite ceramics

  • Author/Authors

    S. Ezhilvalavan، نويسنده , , J.M. Xue، نويسنده , , John Wang، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2002
  • Pages
    6
  • From page
    50
  • To page
    55
  • Abstract
    Strontium bismuth niobate vanadates SrBi2(V0.1Nb0.9)2O9 (SBVN) were prepared by solid state reaction sintering of high purity powder mixtures of constituent oxides. With the partial substitution of niobium by vanadium (10 at.%), the single phase layered perovskite structure was preserved and the sintering temperature of SBVN was significantly reduced. Dielectric properties of SBVN were investigated in a broad range of temperatures (400–1000 K) and frequencies (1 Hz–10 MHz). Strong relaxor-like dielectric relaxation at the ferroelectric transition temperature was observed. X-ray diffraction and scanning electron microscopy analysis were performed to envisage the influence of vanadium doping on the dielectric properties of SBN. The effect of post-sinter annealing on the frequency dispersion of SBVN and the possible mechanism for the observed dielectric relaxation are also presented.
  • Keywords
    Strontium bismuth niobate vanadate , Layered perovskites , Sintering , Dielectric relaxation , Ferroelectrics
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2002
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1060828