Title of article :
Effects of MnO2 doping in V2O5-doped ZnO varistor system
Author/Authors :
Huey Hoon Hng، نويسنده , , Poh Ling Chan، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2002
Abstract :
The effects of the amount of MnO2 (0.5–2 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO–0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with γ-Zn3(VO4)2 as the minority secondary phase. The cumulative addition of MnO2 improves the varistor performance by increasing the nonlinear coefficient α. The α-value is found to increase with the amount of MnO2, and a highest value of 31.8 is obtained for the sample doped with 2 mol% MnO2.
Keywords :
V2O5-doped ZnO varistors , MnO2 , Nonlinear coefficient
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics