Characterization of CuInTe2 thin film synthesized by three source co-evaporation technique

CuInTe2 films were synthesized by co-evaporating Cu, In and Te from three different elemental sources onto glass substrates. The films were polycrystalline in nature and oriented preferentially in the (1 1 2) direction. Lattice constants were determined from the X-ray diffraction analysis. The optical band gap, determined from wavelength dependence of optical transmittance, varied within 0.86–0.98 eV with variation of Cu/In ratio within 0.68–1.42. The grain size for CuInTe2 film deposited at optimum substrate temperature (∼770 K) was ∼0.5 μm. The electrical (dark conductivity, photoconductivity and carrier concentration) and optical properties of the films with different Cu/In and Te/(Cu+In) ratios were studied to ascertain the carrier transport mechanism in the films.