Studies on structural, optical and electrical properties of indium sulfide thin films

Onto amorphous glass substrates, indium sulfide (In2S3) thin films have been successfully deposited using versatile and simple successive ionic layer adsorption and reaction (SILAR) method. These films are characterized by structural, optical and electrical measurement techniques. Uniform distribution of grains is clearly noted from the photograph of scanning electron microscope (SEM). Cubic structure with amorphous nature of films is reported. The optical band gap of In2S3 thin films is estimated to be 2.3 eV. Films were highly resistive possesses resistivity of the order of 105 Ω cm.