Characterization of BaPbO3 and Ba(Pb1−xBix)O3 thin films

BaPbO3 and Ba(Pb1−xBix)O3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 °C and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Ω sq−1 (resistivity ≈1.07×10−4 Ω cm) could be obtained at 750 °C. However, an annealing temperature over 800 °C causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1−xBix)O3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Ω sq−1 at x=0.3.