Title of article :
Study on the optoelectronic properties of amorphous selenium-based xerographic photoreceptors for electrophotography
Author/Authors :
Jung-Chuan Chou، نويسنده , , Shuying Yang، نويسنده , , Yen-Sheng Wang، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
4
From page :
666
To page :
669
Abstract :
Amorphous selenium-based material could be used as the photoreceptor of a photocopy machine. For much more understanding of amorphous selenium (a-Se) photoreceptor, the aluminum oxide (Al2O3) and amorphous tungsten trioxide (a-WO3) were deposited onto polished aluminum substrates as the blocking layers using the thermal oxidation and vacuum sputtering systems, respectively. Next, we used a vacuum evaporation method for preparing the amorphous selenium film in order to complete the Al/Al2O3/a-Se and Al/a-WO3/a-Se photoreceptors. The optoelectronic properties of the samples were measured and compared. We produced photoinduced discharge curves (PIDC) using electrostatic paper analyzer, and the initial surface potential (Vso), dark decay time (td), photosensitivity (E1/2) and residual potential (Vr) could be obtained. We can find that Al/a-WO3/a-Se photoreceptor has excellent optoelectronic properties. Furthermore, we also compared different blocking layers and isothermal annealing effects for the photoreceptors.
Keywords :
Photoinduced discharge curve , photosensitivity , Residual potential , Isothermal annealing , Initial surface potential
Journal title :
Materials Chemistry and Physics
Serial Year :
2003
Journal title :
Materials Chemistry and Physics
Record number :
1061175
Link To Document :
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