Title of article
Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators
Author/Authors
H.P Loebl، نويسنده , , M Klee، نويسنده , , C Metzmacher، نويسنده , , W Brand، نويسنده , , R Milsom، نويسنده , , P Lok، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
4
From page
143
To page
146
Abstract
Thin film bulk acoustic wave (BAW) resonators and filters are well suited for mobile communication systems operating at high frequencies between 0.5 and 10 GHz. Piezoelectric thin film materials investigated for BAW devices within Philips include AlN thin films. The relationship between sputter deposition conditions, AlN film structure, electromechanical coupling factor kt, and relevant electrical parameters of BAW devices are discussed.
Keywords
AlN , Bulk acoustic wave , Resonator
Journal title
Materials Chemistry and Physics
Serial Year
2003
Journal title
Materials Chemistry and Physics
Record number
1061227
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