Electron microscopy study of advanced heterostructures for optoelectronics

The application of cross-sectional transmission electron microscopy and scanning electron microscopy to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfection of such crucial elements of the devices like quantum wells, quantum dots, distributed Bragg reflectors as well as electrical contacts. Using these examples, the most important issues of the application of electron microscopy to characterization of optoelectronic devices are discussed.