Analysis of RHEED pattern from semiconductor surfaces

Reflection high-energy electron diffraction (RHEED) is an excellent experimental technique for characterizing the structure of a surface. The information obtained in RHEED may be derived from the position and shape of the streaks in the reflection diffraction pattern. The parameter obtainable from the RHEED analysis is a streak spacing. It can be calculated in relation to the lateral spacing of the rods in the reciprocal lattice. The predicted RHEED pattern derived for a Si(0 0 1) surface is compared with the pattern obtained experimentally. Geometrical aspects of surface reconstruction corresponding to the features in the RHEED pattern from a GaAs(0 0 1) 2×4 surface are presented and explained.